Kwiminyaka engama-60 yekhulu lokugqibela, abasebenzi bezenzululwazi kunye nezobuchwepheshe basebenzisa umgaqo we-semiconductor PN junction luminescence ukuphuhlisa i-LED ukukhanya-emitting diodes.I-LED ephuhliswe ngelo xesha yayisebenzisa i-GaASP, umbala wayo okhanyayo ubomvu.Emva kweminyaka ephantse ibe yi-30 yophuhliso, i-LED leyo wonke umntu aqhelene nayo kakhulu iye yakwazi ukukhupha izibane ezibomvu, eziorenji, ezityheli, eziluhlaza, eziluhlaza kunye nezinye ezinemibala.Nangona kunjalo, i-LED emhlophe yokukhanyisa yaphuhliswa kuphela emva kwe-2000, kwaye umfundi waziswa kwi-LED emhlophe yokukhanyisa.Umthombo wokukhanya we-LED wokuqala owenziwe nge-semiconductor ye-PN ye-junction luminescence umgaqo waphuma ekuqaleni kwe-60s yenkulungwane yama-20.
Izinto ezazisetyenziswa ngelo xesha yayiyi-GaAsP, eyayikhanya ebomvu (λp = 650nm), kwaye kwi-drive current ye-20 mA, i-flux ekhanyayo yayingamawaka ambalwa e-lumens, kunye nokusebenza okukhanyayo okuhambelanayo kwakumalunga ne-0.1 lumens nge-watt nganye. .Embindini we-70s, izinto ezingaphakathi kunye no-N zaziswa ukwenza ii-LED zivelise ukukhanya okuluhlaza (λp=555nm), ukukhanya okutyheli (λp=590nm) kunye nokukhanya oku-orenji (λp=610nm), kunye nokusebenza kakuhle kokukhanya nako kwandiswa ukuya kwi-1 ilume/watt.Ngama-80s okuqala, umthombo wokukhanya we-GaAlAs we-LED wavela, okwenza ukukhanya kwe-LED ebomvu kufikelele kwi-lumens ezili-10 nge-watt nganye.Ekuqaleni kweminyaka engama-90, izinto ezimbini ezintsha, i-GaAlInP, ekhupha ukukhanya okubomvu nokuphuzi, kunye ne-GaInN, ekhupha ukukhanya okuluhlaza kunye nohlaza okwesibhakabhaka, yaphuhliswa ngempumelelo, eyaphucula kakhulu ukukhanya kwe-LED.Kwi-2000, i-LED eyenziwe yangaphambili iphumelele ukukhanya kwe-100 lumens / watt kwimimandla ebomvu kunye ne-orange (λp = 615nm), ngelixa i-LED eyenziwe yamva inokufikelela kwi-50 lumens / watt kwindawo eluhlaza ( λp = 530nm).
Ixesha lokuposa: Nov-11-2022